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TA2109F
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA2109F
RF Amplifier for Digital Servo CD System
TA2109F is a 3-beam type PUH compatible RF Amplifier for Digital Servo to be used in the CD system. In combination with a CMOS single chip processor TC9432AF/TC9462F a CD system can be composed very simply.
Features
* * * * * * * * * * Built in amplifier for reference (VREF, 2 VREF) supply. Built in Auto Laser Power Control circuit. Built in RF amplifier. Built in focus error amp and tracking error amp. Built in sub-beam adder signal amplifier. Capable of tracking balance control with TC9432AF/TC9462F. Capable of RF gain adjustment circuit with TC9432AF/TC9462F. Built in signal amplifier for track counter. Capable of 4 times speed operation. 24 pin mini flat package. Weight: 0.3 g (typ.)
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TA2109F
Block Diagram
SEL L HiZ H
LDC SW1 ON OFF OFF SW2 OFF ON ON SW3 OFF ON ON
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TA2109F
Pin Function
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol VCC FNI FPI TPI TNI MDI LDO SEL TEB 2VRO TEN TEO SBAD FEO FEN VRO RFRP RFIS RFGO RFGC AGCI RFO GND RFN I/O I I I I I O I I O I O O O I O O I O I I O I Functional Description Power supply input terminal Main beam I-V amp input terminal Main beam I-V amp input terminal Sub beam I-V amp input terminal Sub beam I-V amp input terminal Monitor photo diode amp input terminal Laser diode amp output terminal Laser diode control signal input terminal and APC circuit ON/OFF control signal input terminal Remark Connected to pin diode A, C Connected to pin diode B, D Connected to pin diode F Connected to pin diode E Connected to monitor photo diode Connected to laser control circuit 3 signal input (VCC, HiZ, GND)
Tracking error balance adjustment signal input terminal Controlled 3 signal input by 3 PWM signal (PWM carrier = 88.2 kHz) (2 VREF, VR, GND) Reference voltage (2 VREF) output terminal 2 VREF = 4.2 V when VCC = 5 V TE amp negative input terminal TE error signal output terminal Sub beam adder signal output terminal Focus error signal output terminal FE amp negative input terminal Reference voltage (VREF) output terminal VREF = 2.1 V when VCC = 5 V Track count signal output terminal RFRP detect circuit input terminal RF gain signal output terminal RF amplitude adjustment control signal input terminal Controlled by 3 PWM signal (PWM carrier = 88.2 kHz) RF signal amplitude adjustment amp input terminal RF signal output terminal Ground terminal RF amp negative input terminal Connected to TEO through feedback register Connected to FEO through feedback register Connected to RFO through condenser 3 signal input (2 VREF, VR, GND) Connected to RFO through condenser
Maximum Ratings (Ta = 25C)
Characteristics Power supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC PD Topr Tstg Rating 8 400 -40~85 -55~150 Unit V mW C C
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Electrical Characteristics (unless otherwise specified, VCC = 5 V, Ta = 25C)
AC Characteristics
Characteristics Power supply Assured supply voltage Power supply voltage Symbol VCC ICC 2VR IOH2 IOL2 VR VR IOH1 IOL1 RT fc SR THD VOH VOL RLM GV1 GV2 fc SR VOH VOL THD RLM Gv VMDI VLDOP II RT GB fc VOS THD VOH VOL RLM Test Circuit 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 -3dB point VR reference, input open f = 1 kHz, VFEO = 2.4 Vp-p GND reference GND reference f = 1 kHz VLDO = 3.5 VDC LDC = L, VCC reference, SEL = L VMDI = 178 mV f = 1 kHz, RNF = 39 k V = -0.1 V V = +0.1 V 2 x VR/2 VR -1 V = -0.1 V V = +0.1 V f = 100 kHz, RNF = 22 k -3dB point CRFO = 20 pF f = 100 kHz, VRFO = 1.2 Vp-p GND reference GND reference f = 100 kHz, RFGC = 0.6 V f = 100 kHz, RFGC = 3.6 V -3dB point CRFGO = 20 pF GND reference GND reference f = 100 kHz, VRFGO = 1.2 Vp-p SEL = VCC Test Condition Min 4.5 18 4.0 3.0 0.1 2.0 -3.0 5.0 5.0 117 10 3.6 10 0.66 1.60 10 3.6 10 170 -0.7 -200 198 -1.0 -30 3.8 10 Typ. 5.0 24 4.2 2.1 0.0 130 5.0 20 -40 0.73 1.75 5.0 20 -40 200 178 220 22 -40 Max 5.5 30 4.4 2.2 +3.0 143 0.7 0.80 1.90 0.7 192 +200 242 +1.0 +30 0.5 Unit V mA V mA mA V % mA mA k MHz V/s dB V V k V/V V/V MHz V/s V V dB k V/V mV V nA k dB kHz mV dB V V k
Reference voltage Reference voltage: Output current 2VREF Input current Reference voltage Reference Reference voltage limit voltage: Output current VREF Input current Transfer resistance Frequency characteristic Output slew rate RF1 FPI (FNI) RFO Noise/Distortion rate Upper limit output voltage Lower limit output voltage Permissive load resistance Lower limit gain voltage Upper limit gain voltage Frequency characteristic RF2 (AGC) RFO RFGO Output slew rate Upper limit output voltage Lower limit output voltage Noise/Distortion rate Permissive load resistance Gain voltage APC MDI LDO Operation reference voltage LD Off voltage Input bias current Transfer resistance Gain balance Frequency characteristic FE FNI (FPI) FEO Output offset voltage Noise/distortion rate Upper limit output voltage Lower limit output voltage Permissive load resistance
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Characteristics Transfer resistance Transfer resistance range Max transfer resistance Min transfer resistance Gain balance TE TPI (TNI) TEO Frequency characteristic Cut-Off frequency 1 Cut-Off frequency 2 Output offset voltage Noise/Distortion rate Upper limit output voltage Lower limit output voltage Permissive load resistance Transfer resistance Frequency characteristic Noise/Distortion rate SBAD TPI (TNI) SBAD Operation reference voltage Upper limit output voltage Permissive load resistance Gain voltage Detection frequency characteristic RFRP RFIS RFRP Operation reference voltage 1 Operation reference voltage 2 Permissive load resistance fc1 fc2 VOS THD VOH VOL RLM RT fc THD VOPR VOH RLM Gv fc VOPR1 VOPR2 RLM 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 SEL = VCC VR reference, No signal VR reference, 700 kHz, 1.2 Vp-p VR reference, input open f = 1 kHz, VTEO = 2.0 Vp-p GND reference GND reference f = 1 kHz, TEB = VR -3dB point f = 1 kHz, VSBAD = 1.5 Vp-p TNI/TPI = VR, VR reference TNI/TPI = HiZ, VR reference GND reference 1 RNF = 33 k -80 3.8 10 416 -1.1 -1.2 3.8 10 1.37 -1.1 +0.65 10 44 240 -40 520 44 -40 -1.0 -1.1 1.46 100 -1.0 +0.75 +80 0.5 624 -0.9 -1.0 1.54 -0.9 +0.85 kHz kHz mV dB V V k k kHz dB V V k V/V kHz V V k GB 1 RT 1 Symbol RT Test Circuit 1 Test Condition f = 1 kHz, TEB = VR, RNF = 33 k TEB = VR reference TEB = GND TEB = 2 VR TEB = VR Min 1.53 Typ. 1.70 Max 1.87 Unit M
35 -55 -1.0
45 -45
55 -35 +1.0
% % dB
Note:
If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed.
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TA2109F
Test Circuit
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Application Circuit
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Package Dimensions
Weight: 0.3 g (typ.)
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RESTRICTIONS ON PRODUCT USE
000707EBA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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